Products

Laser 28G and 56G EML High Performance

NeoPhotonics offers 28 GBd and 53 GBd EML family in bare die form. They are optimized for 100G (4 x 25 Gbps) telecom, 5G wireless front- and middle-haul, 4 x 50 Gpbs and 4 x 100 Gbps intra-data center applications.

The 28 GBd EML under NRZ modulation supports 26 Gbps data rate over the LAN and extended LAN WDM wavelengths, and operates most efficiently at 55-deg C temperature.

Its 28 GBd EML companion operating under PAM4 modulation delivers 50 Gbps in the CWDM wavelengths suitable for 5G wireless BiDi (bi-directional) and 4 x 50 Gbps intra-data center applications.

The 53 GBd version under PAM4 modulation supports 100 Gbps in the CWDM wavelengths suitable for 5G wireless BiDi and 1 x 100 Gbps and 4 x 100 Gbps intra-data center applications.

Laser DFB for Sipho Transceivers

NeoPhotonics’ family of high power, single mode edge-emitting CW laser diodes covers four wavelengths on the CWDM spacing over O-band – 1271 nm, 1291nm, 1311 nm and 1331 nm – for Silicon Photonics applications. With a buried heterostructure (BH), multiquantum well (MQW) active core, and a distributed feedback (DFB) grating layer, these lasers provide a typical facet power of 30mW at 75C.

In addition to the DFB laser itself, two additional configurations are available:
– DFB laser with an integrated mode-converter (spot-size converter) for optimized optical coupling into a Silicon Photonics modulator; and
– DFB laser with an integrated mode-converter and precision reference surfaces for flip-chip passive alignment.

Laser Narrow Linewidth DFB

NeoPhotonics’ Narrow Linewidth Distributed Feedback Lasers (NLW-DFB) are designed to provide low-noise, single mode 1550nm laser source for cost effective telecom and sensing application. In telecom, NLW-DFB lasers enable fixed wavelength coherent applications where as in 3D sensing/Lidar applications, due to its narrow linewidth, NLW-DFBs deliver +200m range. NeoPhotonics’ NLW-DFB laser array technology when used along silicon photonics can enable chip scale, compact photonic integrated circuits for telecom and 3D sensing applications.

NLW-DFB lasers are manufactured in NeoPhotonics’ in-house fabs. Lasers are qualified to GR-468 requirements and widely deployed since early 2000s.
Laser design is a buried hetero-structure with optimized quantum well to provide high optical output power and narrow linewidth. These lasers temperature and current tuned to achieve desired operating frequency with typical output powers > 16dBm. Temperature tuning enables optical frequency tuning of ~400GHz whereas laser current tuning provide ~0.1GHz/mA optical frequency tuning

Driver for Silicon Photonics MZ Modulator to 56 Gbaud

NeoPhotonics’ GaAs 53 Gbaud PAM4 driver IC is a linear, differential driver optimized for 1 x 100 Gbps and 4 x 100 Gbps applications requiring PAM4 modulation. This driver, implemented in a high-performance GaAs PHEMT process, provides RF output voltage that is well suited to modulate silicon and InP Mach-Zender Modulators (MZM) while maintaining exceptional TDECQ. Its adjustable gain range of 6 dB allows easy interface to a wide range of PAM4 DSPs while maintaining deep modulation to the MZMs.

This driver comes in single- and quad-channel configurations featuring 625- or 700-um channel pitch. The wider channel pitch of 700-um exhibits 4 dB better inter-channel cross-talk penalty in comparison to the 625-um version.

Semiconductor Optical Amplifier (SOA)

NeoPhotonics’ family of high power, single-mode semiconductor optical amplifiers are designed to provide high saturated output power for telecom and 3D sensing applications. These SOAs have several advantages. Since they are ultimately just semiconductor chips, SOAs are much more compact than EDFAs: around a millimeter in size, which makes them a lot easier to package with a photonic chip into a module or transceiver. SOAs are also both lower cost and are very efficient at converting current into light, which is essential for meeting a strict power consumption budget.
With a buried heterostructure and multi-quantum well structure active core, NeoPhotoncis SOAs provide typical saturated output power in excess of 250mW in the 1550nm wavelength range. High power SOAs are manufactured in NeoPhotonics’ in-house fabs and are design to be GR-468 compliant.