NeoPhotonics’ GaAs 53 Gbaud PAM4 driver IC is a linear, differential driver optimized for 1 x 100 Gbps and 4 x 100 Gbps applications requiring PAM4 modulation. This driver, implemented in a high-performance GaAs PHEMT process, provides RF output voltage that is well suited to modulate silicon and InP Mach-Zender Modulators (MZM) while maintaining exceptional TDECQ. Its adjustable gain range of 6 dB allows easy interface to a wide range of PAM4 DSPs while maintaining deep modulation to the MZMs.
This driver comes in single- and quad-channel configurations featuring 625- or 700-um channel pitch. The wider channel pitch of 700-um exhibits 4 dB better inter-channel cross-talk penalty in comparison to the 625-um version.
Parameters | Specifications |
---|---|
Data rate | 53 GBd |
Bandwidth, typical | 35 GHz |
Output voltage swing, typical | 3.5 Vpp |
Gain, maximum | 18.5 dB |
Gain adjustment range | 6 dB |
THD at 1 GHz | Under 3% |
Channel pitch | 625 um and 700 um |
Power consumption, typical | 0.6W/channel |
Die size | 1.47 x 3.2 mm |
Process technology | GaAs PHEMT |