NeoPhotonics’ family of high power, single mode edge-emitting CW laser diodes covers four wavelengths on the CWDM spacing over O-band – 1271 nm, 1291nm, 1311 nm and 1331 nm – for Silicon Photonics applications. With a buried heterostructure (BH), multiquantum well (MQW) active core, and a distributed feedback (DFB) grating layer, these lasers provide a typical facet power of 30mW at 75C.
In addition to the DFB laser itself, two additional configurations are available:
– DFB laser with an integrated mode-converter (spot-size converter) for optimized optical coupling into a Silicon Photonics modulator; and
– DFB laser with an integrated mode-converter and precision reference surfaces for flip-chip passive alignment.
|Peak wavelenth, part 1||1271 nm|
|Peak wavelenth, part 2||1291 nm|
|Peak wavelenth, part 3||1311 nm|
|Peak wavelenth, part 4||1331 nm|
|SMSR, typical||40 dB|
|Linewidth, maximum||20 MHz|
|Optical Power, typical at 75-deg C||30 mW|