NeoPhotonics’ family of high power, single mode edge-emitting CW laser diodes covers four wavelengths on the CWDM spacing over O-band – 1271 nm, 1291nm, 1311 nm and 1331 nm – for Silicon Photonics applications. With a buried heterostructure (BH), multiquantum well (MQW) active core, and a distributed feedback (DFB) grating layer, these lasers provide a typical facet power of 30mW at 75C.
In addition to the DFB laser itself, two additional configurations are available:
– DFB laser with an integrated mode-converter (spot-size converter) for optimized optical coupling into a Silicon Photonics modulator; and
– DFB laser with an integrated mode-converter and precision reference surfaces for flip-chip passive alignment.
Parameters | Specifications |
---|---|
Peak wavelenth, part 1 | 1271 nm |
Peak wavelenth, part 2 | 1291 nm |
Peak wavelenth, part 3 | 1311 nm |
Peak wavelenth, part 4 | 1331 nm |
SMSR, typical | 40 dB |
Linewidth, maximum | 20 MHz |
Optical Power, typical at 75-deg C | 30 mW |