Product Overview
NeoPhotonics’ family of high power, single mode edge-emitting CW laser diodes covers four wavelengths on the CWDM spacing over O-band – 1271 nm, 1291nm, 1311 nm and 1331 nm – for Silicon Photonics applications. With a buried heterostructure (BH), multiquantum well (MQW) active core, and a distributed feedback (DFB) grating layer, these lasers provide a typical facet power of 30mW at 75C.
In addition to the DFB laser itself, two additional configurations are available:
– DFB laser with an integrated mode-converter (spot-size converter) for optimized optical coupling into a Silicon Photonics modulator; and
– DFB laser with an integrated mode-converter and precision reference surfaces for flip-chip passive alignment.
Features
- Precision grating via E-beam lithography
- Operation temperature range: 0 to 75°C
- Integrated mode-converter (spot-size converter)
- Self-aligned epitaxy-defined reference surfaces for flip-chip assembly
- Designed for Telcordia-GR468
- RoHS compliant
Benefits
- Stable single-mode operation
- Efficient coupling to Silicon Photonics waveguide
- Wide operating temperature range
- Qualified for non-hemetic environment
- Low-cost assembly through flip-chip passive alignment
- Fully tested die
Details
| Parameters | Specifications |
|---|---|
| Peak wavelenth, part 1 | 1271 nm |
| Peak wavelenth, part 2 | 1291 nm |
| Peak wavelenth, part 3 | 1311 nm |
| Peak wavelenth, part 4 | 1331 nm |
| SMSR, typical | 40 dB |
| Linewidth, maximum | 20 MHz |
| Optical Power, typical at 75-deg C | 30 mW |