Compound Semiconductor ICs

NeoPhotonics has twosemi-conductor technology platforms that are used to make electronic chips that are integrated with optical devices, such as laser or modulator drivers and trans impedance amplifiers. These platforms are: Gallium Arsenide (GaAs) and Silicon Germanium (SiGe).

Gallium arsenide (GaAs) is a III-V semiconductor compound material used in some field-effect transistors (FETs), and integrated circuits (ICs). With high electron mobility, GaAs-based optoelectronics components are useful at ultra-high RF (radio frequencies), and in fast electronic switching applications, operating at frequencies more than 200GHz. Neo Semi’s pHEMT (pseudomorphic High Electron Mobility Transistors) platform is a technology leader in high performance devices such as driver amplifiers, TI (Transimpedance) amplifiers, broadband amplifiers, and power amplifiers. NeoPhotonics GaAs products are manufactured in NeoPhotonics in house fab.

Silicon germanium (SiGe) is an alloy of silicon and germanium used as a semiconductor material in integrated circuits (ICs) for heterojunction bipolar transistors or as a strain-inducing layer for CMOS transistors. SiGe allows CMOS logic to be integrated with heterojunction bipolar transistors, which have higher forward gain and lower reverse gain than traditional homojunction bipolar transistors. This translates into lower current and higher frequency. SiGe provides high speed performance with a lower power consumption, which is especially suitable for high volume and low cost products, such as TI (Transimpedance) amplifiers. NeoPhotonicsSiGe products are designed in house and manufactured in commercial foundries.