Overview

NeoPhotonics Semiconductor (Neo Semi) has three technology platforms: GaAs Optoelectronics, InP Optics, and SiGe Optoelectronics with two in-house fabs: GaAs and InP.
Gallium arsenide (GaAs) is a III-V semiconductor compound material used in some field-effect transistors (FETs), and integrated circuits (ICs). With high electron mobility, GaAs-based optoelectronics components are useful at ultra-high RF (radio frequencies), and in fast electronic switching applications. The properties of the GaAs allow the devices based on GaAs technology to operate at frequencies more than 200GHz. GaAs devices also generate less noise than most other types of semiconductor components. This is important in small signal amplification. Neo Semi’s pHEMT (pseudomorphic High Electron Mobility Transistors) platform is not just a technology leader, but also a volume leader in the areas of high performance discrete devices such as driver amplifiers, TI (Transimpedance) amplifiers, broadband amplifiers, and power amplifier.

Indium phosphide (InP) is also a III-V semiconductor compound material. Other than the high speed properties similar to GaAs, it has a direct bandgap which can emit or absorb 1310nm and 1550nm lasers which makes InP a perfect candidate for optical devices, such as lasers and photo detectors. Neo Semi has developed and optimized the in-house scalable InP fab processes to make ultra-fast speed InP based EML. EML (electroabsorption modulated laser) incorporates the laser and modulator in one package. With its voltage-induced electroabsorption phenomena, Neo Semi’s EML has a capability to operate more than 60Gbps with a high reliability.

Silicon germanium (SiGe) is an alloy of silicon and germanium used as a semiconductor material in integrated circuits (ICs) for heterojunction bipolar transistors or as a strain-inducing layer for CMOS transistors. SiGe allows CMOS logic to be integrated with heterojunction bipolar transistors, which have higher forward gain and lower reverse gain than traditional homojunction bipolar transistors. This translates into lower current and higher frequency. A relatively new technology, SiGe provides high speed performance with a lower power consumption, which is especially suitable for high volume and low cost product. Combined with the expertise of GaAs high speed optoelectronics, Neo Semi is currently developing TI (Transimpedance) amplifiers based on SiGe platform.